FDMC7660 - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Key Features

Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A.
Max rDS(on) = 3.3 mW at VGS = 4.5 V, ID = 18 A.
High Performance Technology for Extremely Low rDS(on).
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FDMC7660 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC7660
Manufacturer	onsemi
File Size	378.74 KB
Description	N-Channel MOSFET
Datasheet	FDMC7660 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 20 A, 2.2 mW FDMC7660 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A • Max rDS(on) = 3.3 mW at VGS = 4.