FDMC7660 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDMC7660 Key Features
- Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A
- Max rDS(on) = 3.3 mW at VGS = 4.5 V, ID = 18 A
- High Performance Technology for Extremely Low rDS(on)
- This Device is Pb-Free, Halide Free and is RoHS pliant