FDMC86160 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 14 mΩ at VGS = 10 V, ID = 9 A - Max r DS(on) = 23 mΩ at VGS = 6 V, ID = 7 A - High performance technology for extremely low r DS(on) - Termination is Lead-free and Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions. Applications - Bridge Topologies - Synchronous Rectifier Pin 1 Pin 1 S S S S G S S D D D G D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 43 9 50 181 54 2.3 -55 to +150 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.3 53 °C/W Package Marking and Ordering Information Device Marking FDMC86160 Device FDMC86160 Package Power33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation FDMC86160 Rev. C1 .fairchildsemi. Free Datasheet http://../ FDMC86160 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 100 73 1 ±100 V m V/°C μA n A On...