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FDMC86160 - N-Channel Power Trench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A.
  • Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC86160 N-Channel Power Trench® MOSFET January 2013 FDMC86160 N-Channel Power Trench® MOSFET 100 V, 43 A, 14 mΩ Features „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.