FDMC86160 Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
FDMC86160 Key Features
- Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
- Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
