FDMC86160 - N-Channel MOSFET

onsemi

General Description

This N

PowerTrench process that incorporates Shielded Gate technology.

state resistance.

Key Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A.
Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A.
High Performance Technology for Extremely Low rDS(on).
This Device is Lead.
Free and RoHS Compliant.

📥 Download Datasheet

FDMC86160 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC86160
Manufacturer	onsemi
File Size	614.99 KB
Description	N-Channel MOSFET
Datasheet	FDMC86160 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDMC86160	N-Channel Power Trench MOSFET	Fairchild Semiconductor
FDMC86160ET100	MOSFET	Fairchild Semiconductor
FDMC86102	N-Channel Power Trench MOSFET	Fairchild Semiconductor
FDMC86102L	MOSFET	Fairchild Semiconductor
FDMC86102LZ	N-Channel Power Trench MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FDMC86160ET100	N-Channel MOSFET
FDMC86102	N-Channel MOSFET
FDMC86102L	N-Channel MOSFET
FDMC86102LZ	N-Channel MOSFET
FDMC86116LZ	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 43 A, 14 mW FDMC86160 General Description This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.