FDMC86160
FDMC86160 is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET is produced using onsemi’s advanced
Power Trench process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.
Applications
- Bridge Topologies
- Synchronous Rectifier
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 14 m W at VGS = 10 V, ID = 9 A
- Max r DS(on) = 23 m W at VGS = 6 V, ID = 7 A
- High Performance Technology for Extremely Low r DS(on)
- This Device is Lead- Free and Ro HS pliant
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±20
Drain Current
- Continuous
(TC = 25°C)
- Continuous
(TA = 25°C) (Note 1a)
- Pulsed
(Note 4)
EAS Single Pulse Avalanche Energy (Note 3)
181 m J
PD Power Dissipation
(TC = 25°C)
(TA = 25°C) (Note...
