FDMC86160 Description
This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.
FDMC86160 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
- Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A
- High Performance Technology for Extremely Low rDS(on)
- This Device is Lead-Free and RoHS pliant