FDMS015N04B Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuo.
FDMS015N04B Key Features
- RDS(on) = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
- Advanced Package and High Efficiency
- Fast Switching Speed
- 100% UIL Tested
- RoHS pliant
FDMS015N04B Applications
- Synchronous Rectification for ATX / Server
- Battery Protection Circuit