FDMS015N04B Datasheet | Fairchild Semiconductor

- N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 40 V, 100 A, 1.5 mΩ November 2013 Features - RDS(on) = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A - Advanced Package and High Efficiency and Silicon bination for Low RDS(on) - Fast Switching Speed - 100% UIL Tested - Ro HS pliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications - Synchronous Rectification for ATX / Server - Battery Protection Circuit - Motor Drives and Uninterruptible Power Supplies Top Bottom Pin 1 SS S G D DDD Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS TJ,...