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FDMS015N04B - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server Battery Protection C

Key Features

  • RDS(on) = 1.13 mΩ (Typ. ) @ VGS = 10 V, ID = 50 A.
  • Advanced Package and High Efficiency and Silicon Combination for Low RDS(on).
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS015N04B — N-Channel PowerTrench® MOSFET FDMS015N04B N-Channel PowerTrench® MOSFET 40 V, 100 A, 1.5 mΩ November 2013 Features • RDS(on) = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Advanced Package and High Efficiency and Silicon Combination for Low RDS(on) • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.