FDN5630
FDN5630 is 60V N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s Power Trench technology provides faster switching than other MOSFETs with parable RDS(ON) specifications. The result is higher overall efficiency with less board space.
Features
- -
- -
- 1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V RDS(ON) = 0.120 Ω @ VGS = 6 V. Optimized for use in high frequency DC/DC converters. Low gate charge. Very fast switching. Super SOTTM
- 3 provides low RDS(ON) in SOT23 footprint.
Applications
- -
DC/DC converter Motor drives
Super SOT -3
TA = 25 C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
60 ±20
(Note 1a)
Units
V V A W °C
1.7 10 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering...
