FDN5630 Datasheet | onsemi

Description This N- Channel MOSFET has been designed specifically to improve the overall efficiency of dc- dc converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(on) in a small SOT23 footprint. onsemi’s POWERTRENCH technology provides faster switching than other MOSFETs with parable RDS(on) specifications. The result is higher overall efficiency with less board space. Features - - 1.7 A, 60 V  RDS(on) = 0.100 W @ VGS = 10 V  RDS(on) = 0.120 W @ VGS = 6 V - Optimized for Use in High Frequency DC- DC Converters - Low Gate Charge - Very Fast Switching - SUPERSOTt- 3 Provides Low RDS(on) in SOT23 Footprint - This Device is Pb- Free and Halogen Free Applications - DC- DC Converters - Motor Drives DATA SHEET .onsemi. SOT- 23- 3 CASE 527AG MARKING DIAGRAM &E&Y 5630&G &E &Y 5630 &G = Designates Space = Binary Calendar Year Coding Scheme = Specific Device Code = Date Code ORDERING INFORMATION Device FDN5630 Package SOT- 23- 3 (Pb- Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.  Semiconductor ponents Industries, LLC, 2000 December, 2022 - Rev. 5 Publication Order Number: FDN5630/D ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit...