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FDN5630 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 1.7 A (VGS = 10V).
  • RDS(ON) ＜ 100mΩ (VGS = 10V).
  • RDS(ON) ＜ 120mΩ (VGS = 6V) D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipa.

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SMD Type N-Channel MOSFET FDN5630 (KDN5630) MOSFET ■ Features ● VDS (V) = 60V ● ID = 1.7 A (VGS = 10V) ● RDS(ON) ＜ 100mΩ (VGS = 10V) ● RDS(ON) ＜ 120mΩ (VGS = 6V) D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Note.1: 250°C/W when mounted on a 0.