FDP039N08B
FDP039N08B is N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor.
- N-Channel Power Trench® MOSFET
N-Channel Power Trench® MOSFET
80 V, 171 A, 3.9 mΩ
November 2013
Features
- RDS(on) = 3.16 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
- Low FOM RDS(on)
- QG
- Low Reverse-Recovery Charge, Qrr = 87.9 n C
- Soft Reverse-Recovery Body Diode
- Enables High Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- Ro HS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
GDS...
