FDP047AN08A0 Description
FDP047AN08A0 April 2002 FDP047AN08A0 N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.7mΩ.
FDP047AN08A0 Key Features
- r DS(ON) = 4.0mΩ (Typ.), V GS = 10V, ID = 80A
- Qg(tot) = 92nC (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101