Datasheet4U Logo Datasheet4U.com

FDP047AN08A0 - N-Channel MOSFET

Key Features

  • r DS(ON) = 4.0mΩ (Typ. ), V GS = 10V, ID = 80A.
  • Qg(tot) = 92nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82684.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP047N08 N-Channel MOSFET INCHANGE
FDP047N10 N-Channel MOSFET INCHANGE
FDP045N10A 100V 164A N-Channel MOSFET ON Semiconductor
FDP027N08B N-Channel MOSFET ON Semiconductor
FDP030N06 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP047N08 N-Channel MOSFET
FDP047N10 N-Channel MOSFET
FDP045N10A N-Channel PowerTrench MOSFET
FDP020N06B N-Channel PowerTrench MOSFET
FDP023N08B MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP047AN08A0 April 2002 FDP047AN08A0 N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.7mΩ Features • r DS(ON) = 4.0mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.