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FDP12N35 - 350V N-Channel MOSFET

Download the FDP12N35 datasheet PDF. This datasheet also covers the FDPF12N35 variant, as both devices belong to the same 350v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V.
  • Low gate charge ( typical 18 nC).
  • Low Crss ( typical 15 pF).
  • Fast switching.
  • Improved dv/dt capability April 2007 UniFETTM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF12N35_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP12N50 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP12N35 / FDPF12N35 350V N-Channel MOSFET FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 15 pF) • Fast switching • Improved dv/dt capability April 2007 UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.