FDP12N35 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...
FDP12N35 Key Features
- 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V
- Low gate charge ( typical 18 nC)
- Low Crss ( typical 15 pF)
- Fast switching
- Improved dv/dt capability