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FDP12N35 Datasheet 350v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP12N35 / FDPF12N35 350V N-Channel MOSFET FDP12N35 / FDPF12N35 350V N-Channel.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Key Features

  • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V.
  • Low gate charge ( typical 18 nC).
  • Low Crss ( typical 15 pF).
  • Fast switching.
  • Improved dv/dt capability April 2007 UniFETTM.

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