Datasheet4U Logo Datasheet4U.com

FDP12N60NZ - N-Channel MOSFET

Download the FDP12N60NZ datasheet PDF. This datasheet also covers the FDPF12N60NZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 530 m (Typ. ) @ VGS = 10 V, ID = 6 A.
  • Low Gate Charge ( Typ. 26 nC).
  • Low Crss ( Typ. 12 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF12N60NZ_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDP12N50NZ N-Channel MOSFET INCHANGE
FDP120N10 N-Channel MOSFET INCHANGE
FDP100N10 N-Channel MOSFET INCHANGE
FDP150N10 N-Channel MOSFET INCHANGE
FDP16AN08A0 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP12N35 350V N-Channel MOSFET
FDP12N50 N-Channel MOSFET
FDP12N50F N-Channel MOSFET
FDP12N50NZ N-Channel MOSFET
FDP120AN15A0 N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET March 2013 FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features • RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge ( Typ. 26 nC) • Low Crss ( Typ. 12 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Description UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.