FDP18N20F Datasheet | Fairchild Semiconductor

FDP18N20F / FDPF18N20FT - N-Channel Uni FETTM FRFET® MOSFET FDP18N20F / FDPF18N20FT N-Channel Uni FETTM FRFET® MOSFET 200 V, 18 A, 140 mΩ November 2013 Features - RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A - Low Gate Charge (Typ. 20 n C) - Low Crss (Typ. 24 p F) - 100% Avalanche Tested - Ro HS pliant Applications - LCD/LED TV - Consumer Appliances - Lighting - Uninterruptible Power Supply - AC-DC Power Supply Description Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of Uni FET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional ponent and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. TO-220 TO-220F MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o...