FDP3205 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A High performance trench technology for extermly low RDS(on) High power and current handing capability RoHS pliant D G D S TO-220 FDP Series G S MOSFET Maximum...
FDP3205 Key Features
- This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially
- RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
- High performance trench technology for extermly low RDS(on)
- High power and current handing capability
- RoHS pliant
- Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC)