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FDP3205 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A High perfo

Key Features

  • N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mΩ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP3205 N-Channel PowerTrench® MOSFET May 2008 FDP3205 Features N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mΩ Description • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • High performance trench technology for extermly low RDS(on) • High power and current handing capability • RoHS compliant D G D S TO-220 FDP Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted www.DataSheet4U.