Datasheet Details
| Part number | FDP3205 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 429.30 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet | FDP3205_FairchildSemiconductor.pdf |
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Overview: FDP3205 N-Channel PowerTrench® MOSFET May 2008 FDP3205.
| Part number | FDP3205 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 429.30 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet | FDP3205_FairchildSemiconductor.pdf |
|
|
|
• This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
• RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • High performance trench technology for extermly low RDS(on) • High power and current handing capability • RoHS pliant D G D S TO-220 FDP Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted ..
Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed (Note 2) (Note 1) Ratings 55 ±20 100 390 365 150 1.0 -55 to +175 Units V V A A mJ W W/oC oC Operating and Storage Temperature Range Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.0 62.5 Units oC/W ©2008 Fairchild Semiconductor Corporation FDP3205 Rev.
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