FDP5N50 Datasheet | Fairchild Semiconductor

FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features - RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A - Low gate charge ( Typ. 11nC) - Low Crss ( Typ. 5pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - RoHS pliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and mutation mode. These devices are well suited for...