Datasheet4U Logo Datasheet4U.com

FDP5N50 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 1.15Ω ( Typ. )@ VGS = 10V, ID = 2.5A.
  • Low gate charge ( Typ. 11nC).
  • Low Crss ( Typ. 5pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant December 2007 UniFETTM tm.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP51N25 N-Channel MOSFET ON Semiconductor
FDP52N20 N-Channel MOSFET ON Semiconductor
FDP5500-F085 N-Channel UltraFET Power MOSFET ON Semiconductor
FDP027N08B N-Channel MOSFET ON Semiconductor
FDP030N06 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP5N50F N-Channel MOSFET
FDP5N50NZ N-Channel MOSFET
FDP5N50U N-Channel MOSFET
FDP5N60NZ MOSFET
FDP51N25 N-Channel UniFET MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.