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FDP5N50 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 1.15Ω ( Typ. )@ VGS = 10V, ID = 2.5A.
  • Low gate charge ( Typ. 11nC).
  • Low Crss ( Typ. 5pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant December 2007 UniFETTM tm.

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Datasheet preview – FDP5N50

Datasheet Details

Part number FDP5N50
Manufacturer Fairchild Semiconductor
File Size 232.56 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP5N50 Datasheet
Additional preview pages of the FDP5N50 datasheet.

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Full PDF Text Transcription

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FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
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