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FDP5N50F - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 1.25Ω ( Typ. )@ VGS = 10V, ID = 2.25A.
  • Low gate charge ( Typ. 11nC).
  • Low Crss ( Typ. 5pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant UniFETTM tm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET December 2007 FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection.