FDP5N50U Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutationmode. These devices are well suited for high efficient switched mode power supplies and...
FDP5N50U Key Features
- RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A
- Low gate charge ( Typ. 11nC)
- Low Crss ( Typ. 5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Drain current limited by maximum junction temperature
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