FDPC8011S Overview
N-Channel Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS pliant This device includes two specialized N-Channel MOSFETs in a dual package. The switch node...
FDPC8011S Key Features
- Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A
- Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant