FDPF6N60ZUT Datasheet | Fairchild Semiconductor

- N-Channel Uni FETTM II Ultra FRFETTM MOSFET N-Channel Uni FETTM II Ultra FRFETTM MOSFET 600 V, 4.5 A, 2 Ω November 2013 Features - RDS(on) = 1.7 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A - Low Gate Charge (Typ. 14.5 n C) - Low Crss (Typ. 5 p F) - 100% Avalanche Tested - Improved dv/dt Capability - Ro HS pliant Applications - LCD/LED TV - Lighting - Uninterruptible Power Supply - AC-DC Power Supply Description Uni FETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows Uni FET II MOSFET to withstand over 2k V HBM surge stress. Uni FET II Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore Uni FET II Ultra FRFET MOSFET can remove additional ponent and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. TO-220F MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed Single Pulsed Avalanche Energy Avalanche...