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FDR8305N - N-Channel MOSFET

General Description

These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V.
  • Low gate charge (16.2nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FD8305N November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V. • • • • Low gate charge (16.2nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.