Datasheet4U Logo Datasheet4U.com

FDR8308P - P-Channel MOSFET

General Description

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

Key Features

  • -3.2 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V, RDS(ON) = 0.070 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-8 package: small footprint (40% less than SO-8); low profile(1mmthick); maximum power comparable to SO-8. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 P 08 83 5 6 S2 7 8 4 3 2 1 G2 pin 1 SuperSOT -8 TM G1 S1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwis.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDR6674A N-Channel MOSFET Analog Devices
FDRW30S120J Diode Fuji
FDRW35S60L Ultrafast Rectifier INCHANGE
FDRW60C120J Diode Fuji

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDR8305N N-Channel MOSFET
FDR8321L P-Channel MOSFET
FDR836P P-Channel MOSFET
FDR838P P-Channel MOSFET
FDR840P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -3.2 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V, RDS(ON) = 0.070 Ω @ VGS = -2.5 V. Low gate charge (13nC typical).