FDR840P Description
This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDR840P Key Features
- 10 A, -20 V. RDS(ON) = 0.011 Ω @ VGS = -4.5 V RDS(ON) = 0.016 Ω @ VGS = -2.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability