FDR840P Overview
Description
This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Key Features
- 10 A, –20 V. RDS(ON) = 0.011 Ω @ VGS = –4.5 V RDS(ON) = 0.016 Ω @ VGS = –2.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
