FDR842P Overview
Description
This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Key Features
- 11 A, –12 V RDS(ON) = 9 mΩ @ VGS = –4.5 V RDS(ON) = 12 mΩ @ VGS = –2.5 V RDS(ON) = 16 mΩ @ VGS = –1.8 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
