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FDS2670 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS2670 August 2001 FDS2670 200V N-Channel PowerTrench MOSFET.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1.

FDS2670 Distributor

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