FDS3670
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
- 6.3 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V.
- Low gate charge (57 nC typical).
- Fast switching speed
- High performance trench technology for extremely low RDS(ON) .
- High power and current handling capability.
- 5 6 7 4 3 2 1 SO-8 S S S G
