Fairchild Semiconductor FDS3672
N-Channel MOSFET
FEATURES
● r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A● Qg(tot) = 28nC (Typ.), VGS = 10V
● Low Miller Charge
● Low QRR Body Diode
● Optimized efficiency at high frequencies
● UIS Capability (Single Pulse and Repetitive Pulse)
APPLICATIONS
● DC/DC converters and Off-Line UPS● Distributed Power Architectures and VRMs
● Primary Switch for 24V and 48V Systems
● High Voltage Synchronous Rectifier
● Direct Injection / Diesel Injection Systems
● 42V Automotive Load Control Formerly developmental type 82763
● Electronic Valve Train Systems Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET
MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W) Continuous (TA = 100oC, VGS = 10V, Rθ JA = 50oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 7.5 4.8 Figure 4 416 2.5 20 -55 to...