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FDS3672 - 100V N-ChanneI MOSFET

General Description

GATE SOURCE DRAIN SOP-8 5678 D D D D S S S G 1234 D G S 4.Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (TA=25°C, VGS=10V, RθJA=50°C/W) Continuous (TA=100°C, VGS=10V, RθJA=50°C/W) Pulsed Single Pulse

Key Features

  • ID=7.5A RDS(ON)=23mΩ(VGS=10V) Qg(tot) = 28nC(Typ. ),VGS=10V Low Miller Charge 2.

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Datasheet Details

Part number FDS3672
Manufacturer UMW
File Size 1.54 MB
Description 100V N-ChanneI MOSFET
Datasheet download datasheet FDS3672 Datasheet

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UMW FDS3672 100V N-ChanneI MOSFET 1.Features ID=7.5A RDS(ON)=23mΩ(VGS=10V) Qg(tot) = 28nC(Typ.),VGS=10V Low Miller Charge 2.Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier 3.Pinning information Pin 4 1,2,3 5,6,7,8 Symbol G S D Description GATE SOURCE DRAIN SOP-8 5678 D D D D S S S G 1234 D G S 4.