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FDS3672 Datasheet

The FDS3672 is a 100V N-ChanneI MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDS3672
ManufacturerUMW
Overview GATE SOURCE DRAIN SOP-8 5678 D D D D S S S G 1234 D G S 4.Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continu. ID=7.5A RDS(ON)=23mΩ(VGS=10V) Qg(tot) = 28nC(Typ.),VGS=10V Low Miller Charge 2.Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Primary Switch for 24.
Part NumberFDS3672
DescriptionN-Channel MOSFET
Manufactureronsemi
Overview MOSFET – N-Channel, POWERTRENCH) 100 V, 7.5 A, 22 mW FDS3672 Features • rDS(ON) = 19 mW (Typ.), VGS = 10 V, ID = 7.5 A • Qg(tot) = 28 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • .
* rDS(ON) = 19 mW (Typ.), VGS = 10 V, ID = 7.5 A
* Qg(tot) = 28 nC (Typ.), VGS = 10 V
* Low Miller Charge
* Low QRR Body Diode
* Optimized Efficiency at High Frequencies
* UIS Capability (Single Pulse and Repetitive Pulse)
* Pb−Free and Halide Free Applications
* DC−DC Converters and Off−Line UPS
* .
Part NumberFDS3672
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview FDS3672 March 2003 FDS3672 N-Channel PowerTrench® MOSFET 100V, 7.5A, 22mΩ Features • r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Bod.
* r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A
* Qg(tot) = 28nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* Optimized efficiency at high frequencies
* UIS Capability (Single Pulse and Repetitive Pulse) Applications
* DC/DC converters and Off-Line UPS
* Distributed Power Architectur.