FDS4897AC Overview
Description
Q1: N-Channel - Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A - Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A Q2: P-Channel - Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A - Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A - 100% UIL Tested - RoHS Compliant These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
