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FDS4897C - Dual N & P-Channel PowerTrench MOSFET

Datasheet Summary

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Inverter

Features

  • Q1: N-Channel 6.2A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V.
  • Q2: P-Channel.
  • 4.4A,.
  • 40V RDS(on) = 46mΩ @ VGS =.
  • 10V RDS(on) = 63mΩ @ VGS =.
  • 4.5V.
  • High power handling capability in a widely used surface mount package.
  • RoHS compliant DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Q2 5 4 6 3 Q1 7 2 8 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS.

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Datasheet Details

Part number FDS4897C
Manufacturer Fairchild Semiconductor
File Size 184.61 KB
Description Dual N & P-Channel PowerTrench MOSFET
Datasheet download datasheet FDS4897C Datasheet
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET November 2005 FDS4897C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application • Inverter • Power Supplies Features • Q1: N-Channel 6.2A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V • Q2: P-Channel –4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V RDS(on) = 63mΩ @ VGS = –4.
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