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FDS4895C - Dual N & P-Channel PowerTrench MOSFET

Datasheet Summary

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • Q1: N-Channel RDS(on) = 39mΩ @ VGS = 10V RDS(on) = 57mΩ @ VGS = 7V.
  • Q2: P-Channel RDS(on) = 63mΩ @ VGS =.
  • 4.5V.
  • High power and handling capability in a widely used surface mount package.
  • 4.4A,.
  • 40V RDS(on) = 46mΩ @ VGS =.
  • 10V 5.5A, 40V.

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Datasheet Details

Part number FDS4895C
Manufacturer Fairchild Semiconductor
File Size 195.53 KB
Description Dual N & P-Channel PowerTrench MOSFET
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www.DataSheet4U.com FDS4895C June 2005 FDS4895C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • Q1: N-Channel RDS(on) = 39mΩ @ VGS = 10V RDS(on) = 57mΩ @ VGS = 7V • Q2: P-Channel RDS(on) = 63mΩ @ VGS = –4.5V • High power and handling capability in a widely used surface mount package –4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V 5.
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