Datasheet Summary
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June 2005
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
- Q1: N-Channel RDS(on) = 39mΩ @ VGS = 10V RDS(on) = 57mΩ @ VGS = 7V
- Q2: P-Channel RDS(on) = 63mΩ @ VGS =
- 4.5V
- High power and handling capability in a widely used surface mount package
- 4.4A,
- 40V RDS(on) = 46mΩ @ VGS =
- 10V 5.5A, 40V
Application
- - Motor Control DC/DC conversion
D1 D
D1 D
DD2 D2 D
5...