Datasheet Details
| Part number | FDS6064N3 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 189.86 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS6064N3_FairchildSemiconductor.pdf |
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Overview: FDS6064N3 May 2003 FDS6064N3 20V N-Channel PowerTrench MOSFET General.
| Part number | FDS6064N3 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 189.86 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS6064N3_FairchildSemiconductor.pdf |
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|
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Applications • Synchronous rectifier • DC/DC converter • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V A W °C 23 60 3.0 –55 to +150 (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS6064N3 Device FDS6064N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS6064N3 Rev B2 (W) FDS6064N3 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 8 V, VGS = –8 V , VGS = 0 V VDS = 0 V VDS = 0 V Min 20 Typ Max Units V Off Characteristics 11 1 100 –100 0.4 0.6 –3 3.4 3.8 4.9 4.5 179 7191 1403 703 VGS = 15 mV, (Note 2) mV/°C µA nA nA V mV/°C 4 5 7 8 mΩ On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA VDS = VGS, I
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