Datasheet4U Logo Datasheet4U.com

FDS6064N7 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Key Features

  • 23 A, 20 V. RDS(ON) RDS(ON) RDS(ON) = 3.5 mΩ @ VGS = 4.5 V = 4 mΩ @ VGS = 2.5 V = 6 mΩ @ VGS = 1.8 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Fast switching, low gate charge.
  • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6298 N-Channel MOSFET ON Semiconductor
FDS6570A N-Channel MOSFET ON Semiconductor
FDS6574A N-Channel MOSFET ON Semiconductor
FDS6575 P-Channel 20V MOSFET VBsemi
FDS6612A N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS6064N3 N-Channel MOSFET
FDS6162N3 N-Channel MOSFET
FDS6162N7 N-Channel MOSFET
FDS6294 N-Channel MOSFET
FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS6064N7 May 2003 FDS6064N7 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 23 A, 20 V. RDS(ON) RDS(ON) RDS(ON) = 3.5 mΩ @ VGS = 4.5 V = 4 mΩ @ VGS = 2.5 V = 6 mΩ @ VGS = 1.