FDS6892AZ Datasheet | Fairchild Semiconductor

Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 24 mΩ @ VGS = 2.5 V - Low gate charge (12 n C typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability D2 D D2 D DD1 D1 D 5 6 G1 S1 G Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1a) Units 7.5 30 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 - 55 to +150 °C TJ, TSTG Operating and Storage Junction Temperature...