FDS6894A Datasheet | Fairchild Semiconductor

escription These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V - Low gate charge (17 n C) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ±8 (Note 1a) Units 8 32...