Description
These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 7.5 A, 20 V. RDS(ON) = 0.018 Ω.
- @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
FDS6890A Datasheet
