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FDS6898A - N-Channel MOSFET

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
FDS8880 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits FDS6898A/ MC6898A VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 30 @ VGS = 4.5V 40 @ VGS = 2.5V ID(A) 6.9 6.0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 6.9 5.4 30 2.8 Power Dissipation a TA=25°C TA=70°C PD 2.1 1.