FDS6898A Overview
Key Features
- 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V
- Low gate charge (16 nC typical)
- High performance trench technology for extremely low RDS(ON)
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FDS6898A | Fairchild Semiconductor | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6898A | Freescale Semiconductor | N-Channel MOSFET |
| FDS6898AZ | Fairchild Semiconductor | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6894AZ | Fairchild Semiconductor | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6890A | Fairchild Semiconductor | Dual N-Channel MOSFET |