FDS6890A Overview
Description
These N-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V
- Low gate charge (23nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
