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FDS6890A - Dual N-Channel MOSFET

General Description

These N-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

DC/DC converter Motor

Key Features

  • 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V.
  • Low gate charge (23nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability. D2 D2 5 D1 D1 6 G2 7 S2 G1 8 SO-8 pin 1 S1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuo.

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Datasheet Details

Part number FDS6890A
Manufacturer onsemi
File Size 193.71 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDS6890A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6890A FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor drives Features • 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability.