FDS6898AZ Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6898AZ Key Features
- 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V
- Low gate charge (16 nC typical)
- ESD protection diode (note 3)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability