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FDS6898AZ Datasheet Dual N-channel Logic Level Pwm Optimized Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS6898AZ October 2001 FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench®.

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

  • 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V.
  • Low gate charge (16 nC typical).
  • ESD protection diode (note 3).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D2 D D2 D DD1 D1 D 5 6 G1 S1 G Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S 7 8 S S 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.

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