FDS7079ZN3 Datasheet | Fairchild Semiconductor

Description Advanced P Channel MOSFET bined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance. Applications for this device include multi-cell battery protection and charging, including protection and load switching in notebook puter and notebook battery packs. Features - - 16 A, - 30 V. RDS(ON) = 7.5 mΩ @ VGS = - 10 V RDS(ON) = 11.5 mΩ @ VGS = - 4.5 V - ESD protection diode (note 3) - ESD rating: 4k V - High performance trench technology for extremely low RDS(ON) - FLMP SO-8 package for enhanced thermal performance in industry-standard package size NC D NC D NC D NC D FLMP SO-8 Bottom Side Drain Contact 5 6 4 3 2 1 Pin 1SO- G G S S S S S S TA=25o C unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings - 30 ±25 (Note 1a) Units V V A W °C - 16 - 60 3.13 1.5 - 55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note...