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FDS7079ZN3 - 30 Volt P-Channel PowerTrench MOSFET

Description

Advanced P Channel MOSFET combined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance.

Features

  • 16 A,.
  • 30 V. RDS(ON) = 7.5 mΩ @ VGS =.
  • 10 V RDS(ON) = 11.5 mΩ @ VGS =.
  • 4.5 V.
  • ESD protection diode (note 3).
  • ESD rating: 4kV.
  • High performance trench technology for extremely low RDS(ON).
  • FLMP SO-8 package for enhanced thermal performance in industry-standard package size NC D NC D NC D NC D FLMP SO-8 D Bottom Side Drain Contact 5 6 4 3 2 1 Pin 1SO- G G S S S S S S TA=25oC unless otherwise noted 7 8 Absolute.

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Full PDF Text Transcription

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FDS7079ZN3 February 2004 FDS7079ZN3 30 Volt P-Channel PowerTrench MOSFET General Description Advanced P Channel MOSFET combined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance. Applications for this device include multi-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Features • –16 A, –30 V. RDS(ON) = 7.5 mΩ @ VGS = –10 V RDS(ON) = 11.5 mΩ @ VGS = – 4.
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