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FDS8670 Datasheet 30v N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS8670 30V N-Channel PowerTrench® MOSFET August 2006 FDS8670 tm 30V N-Channel PowerTrench®.

General Description

This device has been designed specifically to improve the efficiency of DC-DC converters.

Using new techniques in MOSFET construction, the various ponents of gate charge and capacitance have been optimized to reduce switching losses.

Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits.

Key Features

  • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant.

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FDS8670 Distributor