FDS8670 Datasheet | Fairchild Semiconductor

Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various ponents of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. Features - - - - - 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 n C typical) 100% RG tested (0.9 Ω typical) Ro HS pliant Applications - High Efficiency DC-DC Converters: - Notebook Vcore Power Supply - Tele Brick Synchronous Rectifier - Multi purpose Point Of Load .. 5 6 4 3 2 1 SO-8 7 8 Absolute Maximum Ratings Symbol VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25o C unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units 21 105 2.5 1.2 1 - 55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ,...