FDS8672S - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDS8672S
Manufacturer	ON Semiconductor
File Size	377.02 KB
Description	N-Channel MOSFET
Datasheet	FDS8672S Datasheet
Additional preview pages of the FDS8672S datasheet.

Schottky diode in synchronous DC/DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.

Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A.
Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A.
Includes SyncFET Schottky Body Diode.
High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
High Power and Current Handling Capability.
100% Rg (Gate Resistance) Tested.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant.

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Dec 25, 2023 |