FDS8672S Datasheet | onsemi

MOSFET - N-Channel, POWERTRENCH), Sync FETE General Description The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS8672S includes a patented bination of a MOSFET monolithically integrated with a Schottky diode using ON Semiconductor’s monolithic Sync FET technology. Features - Max RDS(on) = 4.8 m W at VGS = 10 V, ID = 18 A - Max RDS(on) = 7.0 m W at VGS = 4.5 V, ID = 15 A - Includes Sync FET Schottky Body Diode - High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching - High Power and Current Handling Capability - 100% Rg (Gate Resistance) Tested - This Device is Pb- Free, Halogen Free/BFR Free and is Ro HS pliant Applications - Notebook Vcore Low Side Switch - Synchronous Rectifier for DC/DC Converters - Point of Load Low Side Switch .onsemi. Pin 1 SOIC8 CASE 751EB MARKING DIAGRAM $Y&Z&2&K FDS 8672S &Y &Z &2 &K FDS8672S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code PIN CONFIGURATION D5 D6 D7 D8 4G 3S 2S 1S ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor ponents Industries, LLC, 2007 November,...