Datasheet4U Logo Datasheet4U.com

FDS8672S - N-Channel MOSFET

General Description

Schottky diode in synchronous DC/DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.

Key Features

  • Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A.
  • Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A.
  • Includes SyncFET Schottky Body Diode.
  • High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
  • High Power and Current Handling Capability.
  • 100% Rg (Gate Resistance) Tested.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDS8672S
Manufacturer onsemi
File Size 377.02 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8672S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS8672S N-Channel MOSFET Fairchild Semiconductor
FDS8670 30V N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDS86106 MOSFET Fairchild Semiconductor
FDS86140 MOSFET Fairchild Semiconductor
FDS86141 MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDS86141 N-Channel MOSFET
FDS86240 N-Channel MOSFET
FDS86242 150V 4.1A N-Channel MOSFET
FDS8433A P-Channel MOSFET
FDS8449 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, POWERTRENCH), SyncFETE FDS8672S General Description The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using ON Semiconductor’s monolithic SyncFET technology. Features • Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A • Max RDS(on) = 7.0 mW at VGS = 4.