FDS8672S Datasheet and Specifications PDF

The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on.

* Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A
* Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A
* Includes SyncFET Schottky Body Diode
* High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching
* High Power and Current Handling Capability
* 100% Rg (Gate Resistance) Tested
* .

tm The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rD.

* Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A
* Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A
* Includes SyncFET Schottky body diode
* High performance trench technology for extremely low rDS(on) and fast switching
* High power and current handling capability
* 100% Rg (Gate Resistance) tested
* Termin.