FDS8672S Description
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS8672S includes a patented bination of a MOSFET monolithically integrated with a Schottky diode using ON Semiconductor’s monolithic SyncFET technology.
FDS8672S Key Features
- Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A
- Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A
- Includes SyncFET Schottky Body Diode
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- 100% Rg (Gate Resistance) Tested
- This Device is Pb-Free, Halogen Free/BFR Free and is RoHS