FDS8672S Datasheet | Fairchild Semiconductor

FDS8672S N-Channel Power Trench® Sync FET™ December 2007 N-Channel Power Trench Sync FET 30V, 18A, 4.8mΩ Features - Max r DS(on) = 4.8mΩ at VGS = 10V, ID = 18A - Max r DS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A - Includes Sync FET Schottky body diode - High performance trench technology for extremely low r DS(on) and fast switching - High power and current handling capability - 100% Rg (Gate Resistance) tested - Termination is Lead-free and Ro HS pliant ® ™ General Description tm The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low r DS(on) and low gate charge. The FDS8672S includes a patented bination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic Sync FET technology. Application - Synchronous Rectifier for DC/DC Converters - Notebook Vcore low side switch - Point of load low side switch D D D D D D SO-8 S Pin 1 S G S D 8 1 S 6 7 3 2 S S D 5 4 G .. MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 3) (Note 1a) (Note 1b) Ratings 30 ±20 18 80 216 2.5 1.0 -55 to +150 Units V V A m J W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS8672S Device FDS8672S Package SO8 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS8672S...