FGD2N40L Datasheet | Fairchild Semiconductor

Features - VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V - 6k V ESD Protected - High Peak Current Density - TO-252 (D-Pak) - Low VGE(TH) General Description This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode. Applications - Small Engine Ignition Applications ©2006 Fairchild Semiconductor Corporation FGD2N40L Rev. A .fairchildsemi. .. FGD2N40L 400V N-Channel Logic Level IGBT Device Maximum Ratings TA= 25°C unless otherwise noted Symbol BVCES IC ICP VGES VGEP PD TJ TSTG ESD Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous(DC) Collector Current Pulsed(100µs) Gate to Emitter Voltage Continuous(DC) Gate to Emitter Voltage Pulsed Power Dissipation Total TC = 25o C Operating Junction Temperature Range Storage Junction Temperature Range Electrostatic Discharge Voltage at 100p F, 1500Ω Ratings 400 7 29 ±8 ±10 29 -40 to 150 -40 to 150 6 Units V A A V V W °C °C k V Package Marking and Ordering Information Device Marking FGD2N40 Device FGD2N40L Package D-PAK Tape Width 12mm / 16mm Quantity 2500 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVCES BVGES ICES IGES Collector to Emitter Breakdown Voltage Gate-Emitter Breakdown Voltage Collector to Emitter leakage Current Gate-Emitter Leakage Current IC = 1m A, VGE = 0V IGES = ±1m A VCE = 320V VGE = ±8 TC = +25o C 400 ±10 TC = +125o C 10 250 ±10 V V µA µA µA On Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 2.5A, VGE = 2.4V(NOTE1) 1.3 1.6 V Dynamic Characteristics QG(ON) VGEP VGE(TH) CIES RG Gate Charge Gate to Emitter Plateau Voltage Gate to Emitter Threshold Voltage Input Capacitance Internal Gate Series Resistance IC = 2.5A, VCE = 300V, VGE = 10V IC = 2.5A, VCE = 300V IC = 1.0m A, VCE = VGE VCE = 10V, VGE = 0V, f =1MHz 0.70 11 1.8 0.85 357 300 1.2 n C V V p F ohms Switching...