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FGPF50N30T - 50A PDP IGBT

General Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES www.DataSheet4U.com VGES ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25 C @ TC = 100oC o Ratings 300 ± 30 120 46.8 18.7 -55 to +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ.

Overview

FGPF50N30T 300V, 50A PDP IGBT January 2008 FGPF50N30T 300V, 50A PDP.

Key Features

  • High current capability.
  • Low saturation voltage: VCE(sat) =1.4V @ IC = 30A.
  • High input impedance.
  • Fast switching.
  • RoHS compliant tm General.