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FGPF50N30T - 50A PDP IGBT

Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol

Features

  • High current capability.
  • Low saturation voltage: VCE(sat) =1.4V @ IC = 30A.
  • High input impedance.
  • Fast switching.
  • RoHS compliant tm General.

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Full PDF Text Transcription

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FGPF50N30T 300V, 50A PDP IGBT January 2008 FGPF50N30T 300V, 50A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 30A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES www.DataSheet4U.
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