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FGPF50N33BT Datasheet 330V PDP Trench IGBT

Manufacturer: Fairchild (now onsemi)

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General Description

Using novel trench IGBT technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential.

GC E TO-220F Absolute Maximum Ratings Symbol VCES VGES IC ICpulse (1)* ICpulse (2)* PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 25oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp.

for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D < 0.01, pluse width < 10usec *Ic_pluse limited by max Tj ©2008 Fairchild Semiconductor Corporation FGPF50N33BT Rev.

Overview

FGPF50N33BT — 330 V PDP Trench IGBT FGPF50N33BT 330 V PDP Trench.

Key Features

  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) =1.6 V @ IC = 50 A.
  • High Input Impedance.
  • RoHS Compliant.

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