High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum).
Low Collector-Emitter Saturation Voltage
Equivalent Circuit C
B
1
D2-PAK
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number FJB102TM
Top Mark FJB102
R1
3 ≅ LΩ 3 ≅ LΩ
R2 E
Package TO-263 2L (D2PAK)
Packing Method Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommend.
Full PDF Text Transcription for FJB102 (Reference)
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FJB102. For precise diagrams, and layout, please refer to the original PDF.
FJB102 — NPN High-Voltage Power Darlington Transistor December 2014 FJB102 NPN High-Voltage Power Darlington Transistor Features • High DC Current Gain : hFE = 1000 at VC...
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rlington Transistor Features • High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum) • Low Collector-Emitter Saturation Voltage Equivalent Circuit C B 1 D2-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJB102TM Top Mark FJB102 R1 3 ≅ LΩ 3 ≅ LΩ R2 E Package TO-263 2L (D2PAK) Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
FJB102 Datasheet
