FOD3184 Datasheet | Fairchild Semiconductor

Features - High noise immunity characterized by 50k V/µs (Typ.) mon mode rejection @ VCM = 2,000V - Guaranteed operating temperature range of -40°C to +100°C - 3A peak output current for medium power MOSFET/IGBT - Fast switching speed - 210ns max. propagation delay - 65ns max pulse width distortion - Fast output rise/fall time - Offers lower dynamic power dissipation - 250k Hz maximum switching speed - Wide VDD operating range from 15V to 30V - Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output) - Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs - Safety and regulatory approvals - UL1577, 5,000 VACRMS for 1 min. - DIN EN/IEC 60747-5-2, 1,414 peak working insulation voltage - Minimum creepage distance of 8.0mm - Minimum clearance distance of 8mm to 16mm (option TV or TSV) - Minimum insulation thickness of 0.5mm Applications - Plasma Display Panel - High performance DC/DC convertor - High performance switch mode power supply - High performance uninterruptible power supply - Isolated Power MOSFET/IGBT gate drive Description The FOD3184 is a 3A Output Current, High Speed MOSFET/IGBT Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (Al Ga As) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS/IGBT used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing patible with 260°C reflow processes for lead free solder pliance. Functional Block Diagram Package Outlines NC 1 ANODE 2 CATHODE 3 NC 4 8 VDD 8 7 VO2 6 VO1 5 VSS Note: A 0.1µF bypass capacitor must be connected between pins 5 and 8. ©2005 Fairchild Semiconductor Corporation FOD3184 Rev....